电动汽车充电器LED照明Osg60r028htf To247 Vds 650V RDS28mΩMosfet-缤商

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电动汽车充电器LED照明Osg60r028htf To247 Vds 650V RDS28mΩMosfet

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基本信息产品详情证书

基本信息

型号（NO.）	OSG60R028HTF TO247
材料	硅片
Model	Osg60r028htf
包装	不太清楚To247所
信号处理	模拟数字复合与功能
类型	P型半导体
描述	极低开关损耗
特点	出色的稳定性和均匀性
应用程序	PC电源
产业	LED照明
品牌	方位半圆
交通总包	Air在
规格	247
商标	定向半导体
起源	中国
商品编码	854129000
生产能力	每月2万美金
包装尺寸	59.00厘米乘以37.00厘米乘以16.00厘米
包装总重量	19000千克
包装尺寸	59.00厘米乘以37.00厘米乘以16.00厘米
包装总重量	19000千克

产品详情

Product Description

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General Description
The GreenMOS®
high voltage MOSFET
utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS®
Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Low
RDS(ON)
&
FOM
Extremely
low
switching
loss
Excellent
stability
and
uniformity
Applications
PC
power
LED
lighting
Telecom
power
Server
power
EV
Charger
Solar/UPS
Dynamic
Characteristics
Gate
Charge
Characteristics
Body
Diode
Characteristics
Note
Calculated
continuous
current
based
on
maximum
allowable
junction
temperature.Repetitive
rating;
pulse
width
limited
by
max.junction
temperature.Pd
is
based
on
max.junction
temperature,
using
junction-case
thermal
resistance.The
value
of
RθJA
is
measured
with
the
device
mounted
on
1
in
2
FR-4
board
with
2oz.Copper, in a still air environment with Ta=25 °C.VDD=100
V,
VGS=10
V,
L=79.9
mH,
starting
Tj=25
°C.

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