General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.

Features
. Low RDS(ON) & FOM
. Extremely low switching loss
. Excellent stability and uniformity

Applications
. PC power
. LED lighting
. Telecom power
. Server power
. EV Charger
. Solar/UPS

Key Performance Parameters

Parameter Value Unit
VDS, min @ Tj(max) 850 V
ID, pulse 15 A
RDS(ON) , max @ VGS=10V 900 mΩ
Qg 11.7 nC

Product Name Package Marking
OSG80R900DF TO252 OSG80R900D

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance Ciss 647.4 pF
VGS=0 V,
VDS=50 V,
ƒ=100 kHz
Output capacitance Coss 36.1 pF
Reverse transfer capacitance Crss 1.5 pF
Turn-on delay time td(on) 31.3 ns
VGS=10 V,
VDS=400 V,
RG=2 Ω,
ID=4 A
Rise time tr 16.4 ns
Turn-off delay time td(off) 54.6 ns
Fall time tf 7.0 ns

Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Qg 11.7 nC
VGS=10 V,
VDS=400 V,
ID=4 A
Gate-source charge Qgs 2.8 nC
Gate-drain charge Qgd 4.4 nC
Gate plateau voltage Vplateau 5.8 V

Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward voltage VSD 1.3 V IS=5 A,
VGS=0 V
Reverse recovery time trr 216.5 ns VR =400 V,
IS=4 A,
di/dt=100 A/μs
Reverse recovery charge Qrr 1.9 μC
Peak reverse recovery current Irrm 17.0 A