EV Charger LED Lighting Osg60r028htf To247 Vds 650V RDS28mΩ Mosfet-Bincial.com

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EV Charger LED Lighting Osg60r028htf To247 Vds 650V RDS28mΩ Mosfet

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Basic Info.Product DescriptionCertifications

Basic Info.

Model NO.	OSG60R028HTF TO247
Material	Silicon Wafers
Model	Osg60r028htf
Package	To247
Signal Processing	Analog Digital Composite and Function
Type	P-Type Semiconductor
Description	Extremely Low Switching Loss
Characteristics	Excellent Stability and Uniformity
Applications	PC Power
Industries	LED Lighting
Brand	Orientalsemi
Transport Package	Air
Specification	TO247
Trademark	Orientalsemiconductor
Origin	China
HS Code	854129000
Production Capacity	20K/Monthly
Package Size	59.00cm * 37.00cm * 16.00cm
Package Gross Weight	19.000kg
Package Size	59.00cm * 37.00cm * 16.00cm
Package Gross Weight	19.000kg

Product Description

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General Description
The GreenMOS®
high voltage MOSFET
utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS®
Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Low
RDS(ON)
&
FOM
Extremely
low
switching
loss
Excellent
stability
and
uniformity
Applications
PC
power
LED
lighting
Telecom
power
Server
power
EV
Charger
Solar/UPS
Dynamic
Characteristics
Gate
Charge
Characteristics
Body
Diode
Characteristics
Note
Calculated
continuous
current
based
on
maximum
allowable
junction
temperature.Repetitive
rating;
pulse
width
limited
by
max.junction
temperature.Pd
is
based
on
max.junction
temperature,
using
junction-case
thermal
resistance.The
value
of
RθJA
is
measured
with
the
device
mounted
on
1
in
2
FR-4
board
with
2oz.Copper, in a still air environment with Ta=25 °C.VDD=100
V,
VGS=10
V,
L=79.9
mH,
starting
Tj=25
°C.

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