IXTH120P065T MOSFET P-CH 65V 120A TO247 TO-247 (IXTH)-Bincial.com

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IXTH120P065T MOSFET P-CH 65V 120A TO247 TO-247 (IXTH)

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Basic Info.Product Description

Basic Info.

Model Number	IXTH120P065T
Type	MOSFET
Brand Name	Original brand
Package Type	Surface Mount
Mounting Type	SMT/SMD
Description	MOSFET
Place of Origin	Original
Package / Case	standard
Operating Temperature	Standard
Series	all type of transistor
D/C	NEW
Application	MOSFET driver
Supplier Type	Original manufacturer
Cross Reference	/
Media Available	datasheet
Brand	transistor
Current - Collector (Ic) (Max)	standard
Voltage - Collector Emitter Breakdown (Max)	standard
Vce Saturation (Max) @ Ib, Ic	standard
Current - Collector Cutoff (Max)	standard
DC Current Gain (hFE) (Min) @ Ic, Vce	standard
Power - Max	standard
Frequency - Transition	standard
Operating Temperature	standard
Mounting Type	standard
Resistor - Base (R1)	standard
Resistor - Emitter Base (R2)	standard
FET Type	standard
FET Feature	Standard
Drain to Source Voltage (Vdss)	standard
Current - Continuous Drain (Id) @ 25°C	standard
Rds On (Max) @ Id, Vgs	standard
Vgs(th) (Max) @ Id	standard
Gate Charge (Qg) (Max) @ Vgs	standard
Input Capacitance (Ciss) (Max) @ Vds	standard
Frequency	standard
Current Rating (Amps)	standard
Noise Figure	standard
Power - Output	standard
Voltage - Rated	standard
Drive Voltage (Max Rds On, Min Rds On)	standard
Vgs (Max)	standard
IGBT Type	standard
Configuration	standard
Vce(on) (Max) @ Vge, Ic	standard
Input Capacitance (Cies) @ Vce	standard
Input	standard
NTC Thermistor	standard
Voltage - Breakdown (V(BR)GSS)	standard
Current - Drain (Idss) @ Vds (Vgs=0)	standard
Current Drain (Id) - Max	standard
Voltage - Cutoff (VGS off) @ Id	standard
Resistance - RDS(On)	standard
Voltage	standard
Voltage - Output	standard
Voltage - Offset (Vt)	standard
Current - Gate to Anode Leakage (Igao)	standard
Current - Valley (Iv)	standard
Current - Peak	standard
Applications	standard
Transistor Type	standard

Product Description

ProductInformation
BrandNameOriginalbrand
PlaceofOriginOriginal
ModelNumberIXTH120P065T
OperatingTemperatureStandard
Seriesalltypeoftransistor
MountingTypeSMT/SMD
DescriptionMOSFET
TypeMOSFET
D/CNEW
PackageTypeSurfaceMount
ApplicationMOSFETdriver
SupplierTypeOriginalmanufacturer
CrossReference/
MediaAvailabledatasheet
Brandtransistor
Current-Collector(Ic)(Max)standard
Voltage-CollectorEmitterBreakdown(Max)standard
VceSaturation(Max)@Ib,Icstandard
Current-CollectorCutoff(Max)standard
DCCurrentGain(hFE)(Min)@Ic,Vcestandard
Power-Maxstandard
Frequency-Transitionstandard
OperatingTemperaturestandard
MountingTypestandard
Package/Casestandard
Resistor-Base(R1)standard
Resistor-EmitterBase(R2)standard
FETTypestandard
FETFeatureStandard
DraintoSourceVoltage(Vdss)standard
Current-ContinuousDrain(Id)@25°Cstandard
RdsOn(Max)@Id,Vgsstandard
Vgs(th)(Max)@Idstandard
GateCharge(Qg)(Max)@Vgsstandard
InputCapacitance(Ciss)(Max)@Vdsstandard
Frequencystandard
CurrentRating(Amps)standard
NoiseFigurestandard
Power-Outputstandard
Voltage-Ratedstandard
DriveVoltage(MaxRdsOn,MinRdsOn)standard
Vgs(Max)standard
IGBTTypestandard
Configurationstandard
Vce(on)(Max)@Vge,Icstandard
InputCapacitance(Cies)@Vcestandard
Inputstandard
NTCThermistorstandard
Voltage-Breakdown(V(BR)GSS)standard
Current-Drain(Idss)@Vds(Vgs=0)standard
CurrentDrain(Id)-Maxstandard
Voltage-Cutoff(VGSoff)@Idstandard
Resistance-RDS(On)standard
Voltagestandard
Voltage-Outputstandard
Voltage-Offset(Vt)standard
Current-GatetoAnodeLeakage(Igao)standard
Current-Valley(Iv)standard
Current-Peakstandard
Applicationsstandard
TransistorTypestandard
Specificationstandard