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Product Description
Product Description
8 Inch N-type SiC substrate wafer
No. Items Unit Ultra-P Grade Production Grade Dummy Grade
1.Boule Parameters
1.1 Polytype -- 4H 4H 4H
1.2 Surface orientation ° 4°toward<11-20>±0.5º 4°toward<11-20>±0.5º 4°toward<11-20>±0.5º
2. Electrical Parameters
2.1 Dopant -- n-type Nitrogen n-type Nitrogen n-type Nitrogen
2.2 Resistivity ohm·cm 0.015~0.025ohm·cm 0.015~0.025ohm·cm NA
3. Mechanical Parameters
3.1 Diameter mm 200.0±0.2mm 200.0±0.2mm 200.0±0.2mm
3.2 Thickness μm 500±25μm 500±25μm 500±25μm
3.3 Notch orientation ° [1-100]±5° [1-100]±5° [1-100]±5°
3.4 Notch depth mm 1~1.5mm 1~1.5mm 1~1.5mm
3.5 LTV μm ≤3μm(10mm*10mm) ≤5μm(10mm*10mm) ≤15μm(10mm*10mm)
3.6 TTV μm ≤7μm ≤10μm ≤20μm
3.7 Bow μm -20μm~20μm -25μm~25μm -65μm~65μm
3.8 Warp μm ≤30μm ≤35μm ≤70μm
3.9 (AFM) Front (Si-face)
Roughness nm Ra≤0.2nm Ra≤0.2nm Ra≤0.2nm
4. Structure
4.1 Micropipe density ea/cm2 <0.2ea/cm2 <2ea/cm2 <50ea/cm2
4.2 Metal impurities atoms/cm2 ≤1E11atoms/cm2(Al, Cr, Fe,
Ni, Cu, Zn, Pb, Na, K, Ti, Ca,
V, Mn) ≤1E11atoms/cm2(Al, Cr, Fe, Ni,
Cu, Zn, Pb, Na, K, Ti, Ca, V,Mn) ≤1E11atoms/cm2(Al, Cr, Fe, Ni,
Cu, Zn, Pb, Na, K, Ti, Ca, V,
Mn)
4.3 TSD ea/cm2 ≤200ea/cm2 ≤500ea/cm2 NA
4.4 BPD ea/cm2 ≤1000ea/cm2 ≤2000ea/cm2 NA
4.5 TED ea/cm2 ≤3000ea/cm2 ≤7000ea/cm2 NA
5.Front Quality
5.1 Front -- Si Si Si
5.2 Surface Finish -- CMP Si-face CMP CMP Si-face CMP CMP Si-face CMP
5.3 Particles ea/wafer ≤60(size≥0.3μm) ≤100(size≥0.3μm) NA
5.4 Scratches ea/mm ≤5,Total Length≤
1/2*Diameter ≤5,Total Length≤Diameter NA
5.5 Edge
chips/indents/cracks/contamination/stains -- None None NA
5.6 Polytype areas -- None None ≤30%Cumulative
area)
5.7 Front laser marking -- None None None
6. Back Quality
6.1 Back finish -- C-face polished C-face polished C-face polished
6.2 Scratches ea/mm ≤5,Total Length≤Diameter NA NA
6.3 Back defects (edge chips/indents) -- None None NA
6.4 Back roughness nm Ra≤5nm Ra≤5nm Ra≤5nm
6.5 Back laser marking -- Notch, SEMI Notch, SEMI Notch, SEMI
7.Edge
7.1 Edge -- Chamfer Chamfer Chamfer
8. Packaging
8.1 Packaging -- Epi-ready
with vacuum packaging Epi-ready
with vacuum packaging Epi-ready
with vacuum packaging
8.2 Packaging -- Multi-wafer or
single wafer cassette packaging Multi-wafer or
single wafer cassette packaging Multi-wafer or
single wafer cassette packaging
Notes: "NA"means no request. Items not metioned may refer to SEMI-STD.
1.Boule Parameters
1.1 Polytype -- 4H 4H 4H
1.2 Surface orientation ° 4°toward<11-20>±0.5º 4°toward<11-20>±0.5º 4°toward<11-20>±0.5º
2. Electrical Parameters
2.1 Dopant -- n-type Nitrogen n-type Nitrogen n-type Nitrogen
2.2 Resistivity ohm·cm 0.015~0.025ohm·cm 0.015~0.025ohm·cm NA
3. Mechanical Parameters
3.1 Diameter mm 200.0±0.2mm 200.0±0.2mm 200.0±0.2mm
3.2 Thickness μm 500±25μm 500±25μm 500±25μm
3.3 Notch orientation ° [1-100]±5° [1-100]±5° [1-100]±5°
3.4 Notch depth mm 1~1.5mm 1~1.5mm 1~1.5mm
3.5 LTV μm ≤3μm(10mm*10mm) ≤5μm(10mm*10mm) ≤15μm(10mm*10mm)
3.6 TTV μm ≤7μm ≤10μm ≤20μm
3.7 Bow μm -20μm~20μm -25μm~25μm -65μm~65μm
3.8 Warp μm ≤30μm ≤35μm ≤70μm
3.9 (AFM) Front (Si-face)
Roughness nm Ra≤0.2nm Ra≤0.2nm Ra≤0.2nm
4. Structure
4.1 Micropipe density ea/cm2 <0.2ea/cm2 <2ea/cm2 <50ea/cm2
4.2 Metal impurities atoms/cm2 ≤1E11atoms/cm2(Al, Cr, Fe,
Ni, Cu, Zn, Pb, Na, K, Ti, Ca,
V, Mn) ≤1E11atoms/cm2(Al, Cr, Fe, Ni,
Cu, Zn, Pb, Na, K, Ti, Ca, V,Mn) ≤1E11atoms/cm2(Al, Cr, Fe, Ni,
Cu, Zn, Pb, Na, K, Ti, Ca, V,
Mn)
4.3 TSD ea/cm2 ≤200ea/cm2 ≤500ea/cm2 NA
4.4 BPD ea/cm2 ≤1000ea/cm2 ≤2000ea/cm2 NA
4.5 TED ea/cm2 ≤3000ea/cm2 ≤7000ea/cm2 NA
5.Front Quality
5.1 Front -- Si Si Si
5.2 Surface Finish -- CMP Si-face CMP CMP Si-face CMP CMP Si-face CMP
5.3 Particles ea/wafer ≤60(size≥0.3μm) ≤100(size≥0.3μm) NA
5.4 Scratches ea/mm ≤5,Total Length≤
1/2*Diameter ≤5,Total Length≤Diameter NA
5.5 Edge
chips/indents/cracks/contamination/stains -- None None NA
5.6 Polytype areas -- None None ≤30%Cumulative
area)
5.7 Front laser marking -- None None None
6. Back Quality
6.1 Back finish -- C-face polished C-face polished C-face polished
6.2 Scratches ea/mm ≤5,Total Length≤Diameter NA NA
6.3 Back defects (edge chips/indents) -- None None NA
6.4 Back roughness nm Ra≤5nm Ra≤5nm Ra≤5nm
6.5 Back laser marking -- Notch, SEMI Notch, SEMI Notch, SEMI
7.Edge
7.1 Edge -- Chamfer Chamfer Chamfer
8. Packaging
8.1 Packaging -- Epi-ready
with vacuum packaging Epi-ready
with vacuum packaging Epi-ready
with vacuum packaging
8.2 Packaging -- Multi-wafer or
single wafer cassette packaging Multi-wafer or
single wafer cassette packaging Multi-wafer or
single wafer cassette packaging
Notes: "NA"means no request. Items not metioned may refer to SEMI-STD.
Q1: What's the way of shipping ?
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A: T/T, PayPal and etc..
Q3: What's the deliver time?
A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A: T/T, PayPal and etc..
Q3: What's the deliver time?
A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.
8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate
$2400 ~ $2493.11
Smart Device Industry Chain · Electronic Components · Semiconductor


Less than 50 EmployeesOther Manufacturing Industries