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productGoh1-Xxb Hall Effect Current Sensor (Compatible with LEM Hlsr)
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Basic Info.Product DescriptionCertifications

Basic Info.

Model NO.GOH1-XXB
CustomizedNon-Customized
Transport PackageTube
TrademarkGAUSS-ELEC
OriginChina
HS Code8504909090
Production Capacity5000000 Pieces/Yeas

Product Description

GOH1-XXB Series Current Transducer
= 10 ... 50 A
Ref:GOH1-10B, GOH1-16B, GOH1-20B,
GOH1-32B, GOH1-40B, GOH1-50B
Parameter Symbol Unit Specification Conditions
Min Typical Max
Primary nominal RMS current IPN A ±10A, ±16 A, ±20 A, ± 32 A, ±40 A, ±50 A,±120A
Primary current, measuring range IPM A 2.5X IPN For UC>4.6V
Resistance of primary jumper @ TA=25ºC RP mΩ 0.21 T=25ºC
Supply voltage UC V 4.5 5 5.5
Reference voltage(output) Vref V 2.49 2.5 2.51 internal reference
Output voltage range @ IPM Vout-Vref V -2 2
Electrical offset voltage @ IP=0 VOE mV -5 5 25ºC ,Vout-Vref
Temperature coefficient of Vref TCVref ppm/K -170 170 -40ºC~105ºC
Temperature drift of VOE VOE_TRange mV -5 5 -40ºC~105ºC
Sensitivity error εG % -0.5 0.5 Factory adjustment
Temperature coefficient of G TCG ppm/K -170 170 -40ºC~105ºC
Linearity error 0…IPN εL % of IPN -0.5 0.5
Magnetic offset voltage(@10*IPN) referred to primary UOM mV -2.5 2.5
Output RMS noise voltage UN mVP-P 25
mVRMS 2.5
Reaction time @ 10% of IPN tra us 1.4 2 @50A/us
Step response time to 90% of IPN tr us 1.8 2.5 @50A/us
Frequency bandwidth (-3dB) BW kHz 250
Accuracy @IPN X % of IPN -1 1
Accuracy @IPN @ TA XTA % of IPN -2.5 2.5

Certifications

Name:Utility model patent
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Goh1-Xxb Hall Effect Current Sensor (Compatible with LEM Hlsr)
$1.5
Smart Device Industry Chain · Sensors and Detection Elements · Current Sensor
Model NO.:GOH1-XXB
Transport Package:Tube
Origin:China
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