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Diode 10A 1000V Photomultiplier Tube IGBT Transistors Mosfet Transistor Price Diode 10A 1000V
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Product Description
Package Size:10.00cm * 10.00cm * 5.00cm Package Gross Weight:1.000kg Lead Time:10 days (1 - 10 Pieces)
To be negotiated ( > 10 Pieces) Model NO.:diode 10a 1000v Working Frequency:High Frequency Power Level:High Power Function:Photosensitive, Power Triode, Switching Triode Structure:Alloy Material:Silicon Operating Temperature:-55~ 150(Celsius) Maximum Allowable Collector Current:10A Maximum Collector Current (Icm):500mA Maximum Power:300MW Transistor Polarity:NPN Transistor Collector Breakdown Voltage (Vceo):25V Ultrasonic Electronic Circuit Machine EQ:Ultrasonic Electronic Circuit Machine Equipment Supplier Type:Original Manufacturer DC Current Gain (Hfe) (Min) @ IC, Vce:DC Current Gain (Hfe) (Min) @ IC, Vce Mounting Type:Through Hole Type:2sc3998 Transport Package:DIP Specification:DIP Trademark:finestpcb Origin:China HS Code:8541210000 Production Capacity:30000 Pieces Package Size:10.00cm * 10.00cm * 5.00cm Package Gross Weight:1.000kg Lead Time:10 days (1 - 10 Pieces)
To be negotiated ( > 10 Pieces)
To be negotiated ( > 10 Pieces) Model NO.:diode 10a 1000v Working Frequency:High Frequency Power Level:High Power Function:Photosensitive, Power Triode, Switching Triode Structure:Alloy Material:Silicon Operating Temperature:-55~ 150(Celsius) Maximum Allowable Collector Current:10A Maximum Collector Current (Icm):500mA Maximum Power:300MW Transistor Polarity:NPN Transistor Collector Breakdown Voltage (Vceo):25V Ultrasonic Electronic Circuit Machine EQ:Ultrasonic Electronic Circuit Machine Equipment Supplier Type:Original Manufacturer DC Current Gain (Hfe) (Min) @ IC, Vce:DC Current Gain (Hfe) (Min) @ IC, Vce Mounting Type:Through Hole Type:2sc3998 Transport Package:DIP Specification:DIP Trademark:finestpcb Origin:China HS Code:8541210000 Production Capacity:30000 Pieces Package Size:10.00cm * 10.00cm * 5.00cm Package Gross Weight:1.000kg Lead Time:10 days (1 - 10 Pieces)
To be negotiated ( > 10 Pieces)
Diode 10A 1000V Photomultiplier Tube IGBT Transistors Mosfet Transistor Price Diode 10A 1000V
$4.99
Smart Device Industry Chain · Electronic Components · Electronic Tubes and Transistors
Shenzhen 
AuthenticatedLess than 50 EmployeesElectronics/Semiconductor/Integrated Circuit
