Permalink to 2kV SiC mosfet in TO-247 has 14mm creepage and 5.4mm clearance

“It is the first discrete silicon carbide device with a breakdown voltage of 2,000V on the market, with a creepage distance of 14mm and clearance distance of 5.4mm,” according to the company. “The devices are ideal for solar string inverters as well as energy storage systems and electric vehicle charging.”
