Silicon ingots are key component in semiconductor and optical industries. PGO TECH provides numerous standard 150mm silicon ingot options, also referred to as 6” silicon wafers/6inch silicon ingots,suitable for a wide range of applications. In the CZ method, Polycrystaline silicon raw materials are put into a quartz crucible, which is set in a graphite crucible surrounded by graphite heaters in the crystal pulling chamber. These materials are melted by heating in an Argon atmosphere under vacuum and then pulled slowly using a seed crystal. Then Pulling the ingot. PGO TECH has a large quantity of 150 mm silicon wafers in stock in P<100>, N<100>, P<111>, and N<111> types & orientations. Below is a sample of some of the silicon ingots that we have currently in stock. Also,We are committed to meet our customer's requirements either special specifications or standard.

Wuxi Pango Semiconductor Techonlogy Co.,LTD is a leading manufacturer of high quality silicon wafers and silicon ingot in 50MM-450MM diameters. All Si wafers are made internally from the pulling process (to create specific ingot) toward the cleaning process. We use exclusively pure silicon (9N) in order to maintain a reliable and qualitative consistency. Our purpose is to make high value products regarding individual specification to meet every user's requirement with the highest quality level.

Our Advantage

A. Extensive production experience: We are specialized in 6inch silicon materials with an experience of 20 +years.B. Complete production facilities:From 6inch silicon ingot and wafersC. Short Delivery time: Internationally within 3 days.D. High quality raw material: We mainly choose High purity materials

1. Do you grow Silicon at your facility?Yes , we grow own silicon ingot . 2inch - 18inch （50.8mm- 450mm）2. What raw material is used in the growth of your ingots?Wacker polysilicon 3. What sort of information is included on your ingot certifications? Could you send us an example of one?A:Including: Diameter、Type 、Orientation 、Length 、Top resistivity (Central /Edge)、End resistivity(Central /Edge)、Net weight、Engineer signature4. Can you provide both n type and p type Silicon? What resistivity can be achieved for each?No problem. Dopant: Boron/Phosphorus/Arsenic/Antimony Resistiviy: 0.0001-60 ohm.cm