General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.Features
Low RDS(on) & FOM
Extremely low switching loss
Excellent stability and uniformity
Ultra-fast and robust body diode
AEC-Q101 Qualified for Automotive Application
Applications
PC power
Telecom power
Server power
EV Charger
Motor driver
Key Performance Parameters
Marking Information
Package & Pin Information
The HTRB test was performed at 600V more strictly than the AEC-Q101 rev.C (80% V(BR)DSS). All the other tests were performed according to AEC Q101 rev. E.
Dynamic Characteristics
Gate Charge Characteristics
Body Diode Characteristics
Note
Calculated continuous current based on maximum allowable junction temperature.Repetitive rating; pulse width limited by max. junction temperature.Pd is based on max. junction temperature, using junction-case thermal resistance.VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.